Despite increasing economic and technical challenges to scale CMOS, we continue to witness unprecedented performance with 22-nm fully-depleted tri-gate devices now well in production. This tutorial seminar offers a summary of how CMOS device technology has progressed over the past two decades. We will review MOS device and short-channel fundamentals to motivate how device architectures in production have evolved to incorporate elements such as halos and spacers, mechanical strain engineering, high-K dielectric and metal gate, fully-depleted device architectures and finally, tri-gate finFETs.
Wednesday, December 04, 2013
Free and open to the public