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Join ECE Colloquium lecturer Nelson Tansu in a discussion of the advances in III-Nitride semiconductors that have impacted the areas of solid state lighting, energy efficiency, and power electronics. The key technological advances that had overcome the important barriers in the areas of III-nitride semiconductors, specifically on light-emitting diodes (LEDs) and lasers, will be elaborated. The innovations in the materials, devices, and nanostructures have enabled the improvement in the internal quantum efficiency and addressed droop-issues in visible and UV LEDs, and the use of nano/micro-photonics has resulted in dramatic increase in extraction efficiency in devices. The technical approaches to address charge separation issues in nitride based QWs, nanoheteroepitaxy concept for nitride materials, and unique low-cost method for improving the light extraction in LED will be covered in this lecture. Relevant basic sciences and technologies described here with successful technology transfer to industry will also be discussed. The next frontiers in nitride-based research for energy efficiency and power electronics will be emphasized, specifically on the III-nitride dilute-anion semiconductors and new approaches for long wavelength emitters in nitride. Numerous potentially-impactful new directions in III-nitride research beyond solid state lighting and power electronics will also be discussed.