Electro-magnetic waves in the sub-millimeter wave or terahertz (300GHz – 3THz) region of spectrum have been utilized in spectroscopy, in active and passive imaging for detection of concealed weapons, chemicals and biological agents, and in short range radars and secured high data rate communications. Typically compound semiconductor devices are employed to construct the systems for these applications. The high cost and low level of integration of those devices have limited the proliferation of these applications. Recent progress in CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC’s) and SiGe HBT technologies has made it possible to consider silicon technology as an alternative means for realization of capable and economical systems that operate at 200 GHz and higher. The performance of devices as well as signal sources and detectors operating between 100 and 600 GHz fabricated in silicon integrated circuits will be discussed. Based on these, paths to terahertz CMOS circuits are suggested.
Wednesday, March 23, 2011
Free and open to the public