EE 396K: Solid-State Device Theory

Theory of electron, magnetic, and electro-optic devices. May be repeated for credit when the topics vary.

Topics: 

Topic: 1 - Metal Oxide Semiconductor Devices: Physics and Technology Topic: 2 - Semiconductor Physics Introduction to the fundamental physics of charge carrier states in semiconductors, charge carrier interactions among themselves and with the environment, and charge transport in semiconductors and their heterostructures. Additional prerequisite: An introductory course in quantum mechanics. Topic: 4 - Synthesis, Growth, and Analysis of Electronic Materials Topic: 5 - Superconducting Electronic Devices Topic: 6 - Magnetic Phenomena in Materials Topic: 7 - MOS Integrated Circuit Process Integration Topic: 8 - VLSI Fabrication Techniques Topic: 9 - Localized versus Itinerant Electrons in Solids Same as Mechanical Engineering 386R (Topic 1: Localized versus Itinerant Electrons in Solids). Description of electrons, from free atoms to crystals; band theory contrasted with crystal-field theory; evolution of electronic properties on passing from magnetic insulators to normal metals, from ionic to covalent solids, from single-valent compounds to mixed-valent systems; electron-lattice interactions and phase transitions; many examples. Additional prerequisite: A semester of quantum mechanics and a semester of solid-state science or technology. Topic: 10 - Ionic Conductors Same as Mechanical Engineering 386T (Topic 1: Ionic Conductors). Topic: 11 - High-Temperature Superconductors Same as Mechanical Engineering 386T (Topic 2: High-Temperature Superconductors). Topic: 12 - Catalytic Electrodes Same as Mechanical Engineering 386T (Topic 3: Catalytic Electrodes). Topic: 13 - Magnetic Materials Same as Mechanical Engineering 386T (Topic 4: Magnetic Materials). Topic: 14 - Optical Interconnects Topic: 15 - Optoelectronics Integrated Circuits Topic: 16 - Semiconductor Lasers Topic: 17 - Localized-Electron Phenomena Same as Mechanical Engineering 386R (Topic 2: Localized-Electron Phenomena). Analysis of the variation in physical properties versus chemical composition of several groups of isostructural transition-metal compounds. Additional prerequisite: A semester of solid-state science and/or quantum mechanics. Topic: 19 - Plasma Processing of Semiconductors I Plasma analysis using Boltzmann and fluid equations; plasma properties, including Debye length, quasineutrality, and sheaths; basic collisional properties, including Coulomb and polarization scattering; analysis of capacitive and wave-heated plasma processing reactors. Topic: 20 - Plasma Processing of Semiconductors II Plasma chemistry and equilibrium; analysis of molecular collisions; chemical kinetics and surface processes; plasma discharge particle and energy balance; analysis of inductive and DC plasma processing reactors; plasma etching, deposition, and implantation. Topic: 21 - Submicron Device Physics and Techniques Topic: 22 - Semiconductor Microlithography Topic: 23 - Semiconductor Heterostructures Topic: 24 - Microwave Devices Topic: 25 - Organic and Polymer Semiconductor Devices Topic: 26 - Microelectromechanical Systems Topic: 27 - Charge Transport in Organic Semiconductors

Course Level: 

Graduate

Prerequisites: 

Graduate standing and consent of instructor.