Seminars

Paths to Terahertz CMOS Integrated Circuits

Thursday, March 24, 2011

Dr. Kenneth K. O

Abstract

Electro-magnetic waves in the sub-millimeter wave or terahertz (300GHz – 3THz) region of spectrum have been utilized in spectroscopy, in active and passive imaging for detection of concealed weapons, chemicals and biological agents, and in short range radars and secured high data rate communications. Typically compound semiconductor devices are employed to construct the systems for these applications. The high cost and low level of integration of those devices have limited the proliferation of these applications. Recent progress in CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC’s) and SiGe HBT technologies has made it possible to consider silicon technology as an alternative means for realization of capable and economical systems that operate at 200 GHz and higher. The performance of devices as well as signal sources and detectors operating between 100 and 600 GHz fabricated in silicon integrated circuits will be discussed. Based on these, paths to terahertz CMOS circuits are suggested.

Speaker Biography

Dr. Kenneth O received his S.B, S.M, and Ph.D degrees in Electrical Engineering and Computer Science from the Massachusetts Institute of Technology, Cambridge, MA in 1984, 1984, and 1989, respectively. From 1989 to 1994, Dr. O worked at Analog Devices Inc. developing sub-micron CMOS processes for mixed signal applications, and high speed bipolar and BiCMOS processes. He has been a professor at the University of Florida, Gainesville from 1994 to 2009. He is currently the director of Texas Analog Center of Excellence and TI Distinguished Chair of Analog Circuits and Systems at University of Texas at Dallas. His research group is developing circuits and components required to implement analog and digital systems operating between 1 GHz and 1 THz using silicon IC technologies. He was the general chair of the 2001 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Dr. O has also served as an associate editor for IEEE Transaction on Electron Devices from 1999 to 2001. Dr. O was elected to the Adcom of IEEE Solid-State Circuits Society in 2009. He has authored and co-authored ~200 journal and conference publications, as well as holding nine patents. Dr. O has received 1996 NSF Early Career Development Award. Prof. O is also an IEEE Fellow.