Friday, December 1 2017

EER 3.646

Memory has become one of the bottlenecks in the development of intelligent computing systems with high bandwidth and low energy consumption. This seminar will address trends in the development of emerging memory, including resistive RAM (ReRAM), STT-MRAM, and phase-change memory (PCM) for intelligent electronics. The fundamental circuits of nonvolatile memory (NVM) and eNVM will be introduced. This seminar will explore the challenges faced by researchers in the circuit designs, circuit-device-interaction, and architecture-circuit interactions for emerging memory.