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Winners of Inaugural Micron Semiconductor Memory Design Contest Announced

Four student teams in Prof. Jaydeep Kulkarni’s “Semiconductor Memories” graduate course won the inaugural Micron Outstanding Semiconductor Memory Design Contest for their excellent performance in the final class project.

A team of experts headed by Mr. Scott Smith from Micron, Allen, TX Design Center served as design contest judges. This course was funded by the Texas Global Virtual Exchange (GVE) Initiative, and taught in partnership with an international institute. Prof. Abhinav Kranti from Indian Institute of Technology (IIT) Indore, India and students from IIT participated in this course. Dr. Lena Suk of Texas Global supported the GVE activities. Ms. Breanne Ertmer and Ms. Janine Rush-Byers (Micron Foundation) helped in setting up the design contest and Ms. Meizhi Wang helped with TA activities. Texas ECE would like to thank all the contributors and Micron Foundation for their support!

Winning student teams:

1. Digital intensive compute in memory design
Ray Stephany and Rishabh Sehgal

2. Process variation tolerant resistive memory design
Rishab Mehra

3. Machine Learning assisted non-volatile memory modeling
Shanshan Xie and Jacob Rohan

4. Ferroelectric field effect transistor based memory design
Saikat Chakraborty

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