Texas ECE graduate student Hema C. P. Movva has received a Best Student Poster Award at the 2015 Device Research Conference (DRC) for his poster titled ‘Top-gated WSe2 field-effect transistors with Pt contacts’. The conference took place from June 21-24, 2015 at ohio State University. The award will be presented at the 2016 Device Research Conference.
The Device Research Conference has "brought together leading scientists, researchers, and students to share their latest discoveries in device science, technology and modeling for over seven decades."
Abstract of the work:
Tungsten diselenide (WSe$_2$) is a transition metal dichalcogenide (TMD) that is being explored as an alternative channel material for p-type field-effect transistors (FETs). To date, making low resistance contacts has been a major problem limiting the performance potential of WSe$_2$ FETs. Here, we demonstrate top-gated, few-layered WSe$_2$ p-FETs enabled by Ohmic platinum (Pt) contacts, and a hexagonal boron nitride (hBN) gate-dielectric, with ON/OFF ratios > 10$^7$, and intrinsic hole mobilities ~ 100 cm$^2$/Vs at 300 K, and up to 2,000 cm$^2$/Vs at 2 K. The FETs show saturating output characteristics, and also reveal a metal-insulator transition, indicating the high material quality of WSe$_2$.